Micron has launched its first samples of the 1y (1-gamma) DDR5 memory chips this week, emphasizing its commitment to supporting AI processing systems. The company, based in Boise, Idaho, claims that being the first to market with these samples demonstrates its ongoing leadership in technology and manufacturing. Micron plans to expand this advanced technology across its entire range of dynamic random access memory (DRAM) chips, which are set to be available in the second quarter of this year.
At the Mobile World Congress in Barcelona, Micron showcased smartphones equipped with AI-driven features, including visual search and intelligent tools that enhance photo quality. These advancements highlight the importance of powerful memory and storage in transforming smartphones into smart, user-friendly devices.
Micron will provide 1y LPDDR5X 16Gb products to select partners for flagship smartphones in 2026, promising industry-leading performance with up to 15% energy savings, crucial for extending battery life during intensive tasks like video and AI applications.
Micron also introduced the world’s first G9-based UFS 4.1 and UFS 3.1 mobile storage solutions, which enhance speed and power efficiency, offering scalable capacities from 256GB to 1TB. These solutions are designed for the slim, foldable smartphones of today. The company collaborates with smartphone manufacturers to create unique firmware features that address current challenges and improve user experience.Recent partnerships, such as with Samsung for the Galaxy S25 smartphones, highlight the integration of Micron’s power-efficient memory solutions. These smartphones utilize advanced AI features, enhancing user interactions and managing data efficiently. Micron emphasizes that as AI technology evolves, the memory and storage in smartphones will play a crucial role in facilitating complex tasks, ultimately improving productivity and creativity for users.
